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Effect of charge state in nearby quantum dots on quantum Hall effect
APS/123-QED
Effect of charge state in nearby quantum dots on quantum Hall effect
K. Takehana,∗ T. Takamasu, and G. Kido
Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, 305-0047 Japan
5 M. Henini
0 School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
0 (Dated: February 2, 2008)
2 Magnetoresistance measurements have been performed on a gated two-dimensional electron sys-
p tem (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots
e (QDs). Clear features of the quantum Hall effect were observed despite the proximity of the QDs
S layer to the 2DES. However, the magnetoresistance (ρxx) and Hall resistance (ρxy ) are suppressed
4 significantly in the magnetic field range of filling factor ν 1 when a positive voltage is applied to
1 the front gate. The influence of the charge state in QDs was observed on the transport properties of
the nearby 2DES only in the field range of ν 1. It is proposed that the anomalous suppression of
] ρxx and ρxy is related to spin excitation, which is induced by spin-flip processes involving electrons
l
l in the QDs and the 2DES.
a
h PACS numbers: 73.43.Qt, 73.21.La
-
s
e
m I. INTRODUCTION
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