利用湿法刻蚀的方式制备黑硅.pdfVIP

2011 9 15 Sep. 2011 34 18 Modern Electronics T echnique Vol. 34 No. 18 利用湿法刻蚀的方式制备黑硅 张安元, 吴志明, 赵国栋, 姜 晶, 郭振宇 ( , 10054) : 采用 一种简便的方法制备出具有很好光 收性能的黑硅材料, 利用化学气象沉积和光刻的方式在硅片( 100) 表 面形成圆形Si N 掩膜, 然后采用两种湿法刻蚀相结合方式来制备黑硅材料首先采用碱刻蚀的方式对硅片进行各向异性 3 4 刻蚀, 刻蚀完成后在硅片表面形成尖锥形貌; 后期利用金纳米颗粒作为催化剂, 采用酸刻蚀的方式对硅片表面进行改性, 在 硅片表面形成多孔结构这种黑硅材料在250~ 1 000 nm 波段的光 收率可以达到95% 以上 : 黑硅材料; 湿法刻蚀; 表面形貌; 光 收率 :T N304-34 : A : 1004-373X( 2011) 18-0133-04 Preparation of Black Silicon by Means of Wet Etching ZH ANG An-yuan, WU Zh-i ming, ZH AO Guo-dong, JIANG Jing, GUO Zhen- yu (St ate K ey Laboratory of Electronic T hin Films and Integrat ed Devices, School of Optoelectronic Inf ormat ion, University of Electronic Science and T echnology of China, Chengdu 10054, China) Abstract : A simple met hod of preparing black silicon ( BS) with high optical absorpt ivity is introduced. During t he prepa- ration, the chemical vapor deposition and photolithography are employed to form a nitride mask on the surface of silicon ( 100) , and then tw o kinds of wet etching are used to prepare the black silicon material. The first step is that the anisot ropic etching on a silicon wafer is performed w ith the method of alkali etching to form the t ip morphology on the silicon surface. Af- ter that, some gold nanoparticles are taken as t he catalyst to modif y the surface of the silicon by the method of acid etching for forming a porous structure on the silicon surface. T he optical absorptivity of the black silicon can reach 95% at t he wavelength of 250~ 1000 nm. Keyw ords: black silicon material; w et etching; surface morphology; optical absorptivity SF , 0