《Microstructure and electrical properties of La2O3doped ZnObased varistor thin films by solgel process》.pdfVIP

J. Cent. South Univ. (2014) 21: 9−13 DOI: 10.1007/s11771-014-1908-5 Microstructure and electrical properties of La O -doped ZnO-based varistor thin films by sol-gel process 2 3 XU Dong(徐东)1, 2 1 1 , JIANG Bin(姜斌) , CUI Feng-dan(崔凤单) , YANG Yong-tao(杨永涛)1 1 1 1, 3 , XU Hong-xing(徐红星) , SONG Qi(宋琪) , YU Ren-hong(于仁红) 1. School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; 3. Changzhou Ming Errui Ceramics Co., Ltd., Changzhou 213102, China © Central South University Press and Springer-Verlag Berlin Heidelberg 2014 Abstract: Microstructure and electrical properties of La O -doped ZnO-Bi O thin films prepared by sol–gel process have been 2 3 2 3 investigated. X-ray diffraction shows that most diffraction peaks of ZnO are equal, and the crystals of ZnO grow well. Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness. The nonlinear V–I characteristics of the films show that La O develops the electrical properties largely and the best doped content is 2 3 0.3% lanthanum