Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts.pdf

ARTICLE IN PRESS Journal of Crystal Growth 261 (2004) 379–384 Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts C.A. Wang*, D.A. Shiau, R.K. Huang, C.T. Harris, M.K. Connors Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108, USA Abstract A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts to GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy with Diethyltellurium as the n-type doping source. The activation of Te in GaSb is only 0.2–0.5, while it is significantly higher at 0.7–0.8 for GaInAsSb. In addition, the electron mobility is lower in n-GaSb compared to that in n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 1018 cm3 for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 105 O cm2 for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 106 O cm2 for n-GaInAsSb was measured. r 2003 Elsevier B.V. All rights reserved. PACS: 68.55.Ln; 73.61.Ey; 73.40.Cg; 73.40.Vz; 81.15.Kk Keywords: A1. Doping; A3. Organometallic vapor phase epitaxy; B1. GaInAsSb; B1. GaSb; B3. Ohmic contacts 1. Introduction difficult to achieve in n-GaSb because the Ferm level is pinned in the GaSb valence band. In recent GaSb-based III–V semiconductors are of in- studies, GaInAsSb/GaSb thermophotovoltaic creasing interest for high-speed, low power