《DILAS_PW2016_Study_of_High-Power_808_nm_Laser_Diodes》.pdf

A comprehensive reliability study of high-power 808 nm laser diodes mounted with AuSn and indium a a a b b Heiko Kissel* , Gabriele Seibold , Jens Biesenbach , Guenther Groenninger , Gerhard Herrmann , b and Uwe Strauss , aDILAS Diodenlaser GmbH, Galileo-Galilei-Straße 10, 55129 Mainz-Hechtsheim, Germany; bOSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany ABSTRACT In the scope of the project TRUST, more than 20 aging tests have been performed on about 300 high-power laser diode bars with a variation of the mounting technology, current load, operation temperature, and operation mode. Our main goals were the improvement of the reliability and the determination of acceleration parameters for aging tests. We present selected results of long-time aging tests, acceleration factors, and thermal activation energies for high-power 808 nm laser diodes. Due to the increasing demand for higher output powers, we focus mainly on gold-tin mounted laser bars and show their great potential in comparison to the standard indium packaging technology. Keywords: 808 nm, high-power diode lasers, reliability, accelerated lifetime tests 1. INTRODUCTION The broad industrial application of high-power laser diodes (HPLDs) started more than 10 years ago. HPLDs are used directly in materials processing, medicine, display, or priniting