《High didT Light-riggered Thyristors》.pdfVIP

2192 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. ED-34, NO. 10, OCTOBER 1987 High d / d T Light-’ riggered Thyristors Abstract--Directly light-triggered, 4000- and 6000-Vthyristorswere sign, fabrication, and performance are the subject of this designed, fabricated, and tested to obtain high performance indZ/dt, paper. dV/df, and photosensitivity. Built-in resistors protected both auxiliary stages duringhigh dI/dt turn-on. Thenovel use ofetched?oatsto Lower cost for the optical triggering system is the driv- define the resistors was compatible with an optical gate structure that ing force behind the efforts to improve the photosensitiv- gives high dV/dt and good photosensitivity.No additional processing ity of LTT’s. Improved sensitivity is obtained by reduc- steps were needed to fabricate these devices, as compared to standard ing the gate threshold current of the optical gate. light-triggered thyristors. A record value of 1000 A j p s at 60 Hz was However, these gates are more sensitive to faulty dVldt measured on a 6000-V thyristor, and 850 A/ps was safely triggered with only 1.8 mW of light. The dV/dt immunity of the photogatestruc- triggering because it takes less junction displacement cur- ture measured 4000 V/ps, rising exponentially to 80 percent of 4000 rent to turn themon. So, optical gate areas are made much V, V,,,. Thyristorstriggered by dV/dt werenotdestroyed. A new smaller than electrical gates to minimize the dV/dt dis- model of resistor heating was combined with the first measurementsof placement current. In addition, in