《Modeling of polarization effects in InGaN PIN solar》.pdfVIP

Opt Quant Electron (2011) 42:699–703 DOI 10.1007/s11082-011-9458-7 Modeling of polarization effects in InGaN PIN solar cells M. Lestrade · Z. Q. Li · Y. G. Xiao · Z. M. Simon Li Received: 25 September 2010 / Accepted: 16 March 2011 / Published online: 27 March 2011 © Springer Science+Business Media, LLC. 2011 Abstract In this paper, we study the effect of polarization on the performance of InGaN solar cells. By using the APSYS software, we show that the performance of common device designs is adversely affected by the interface charges between the contact layers and absorber.