2008-Modeling of nanoscale devices 教材.pdfVIP

C O N T R I B U T E D P A P E R Modeling of Nanoscale Devices Devices and components subject to quantum and atomistic effects, such as layered semiconductor structures, nanoscale transistors, carbon nanotubes and nanowires may be modeled using quantum analysis and simulation methods. By M. P. Anantram , Mark S. Lundstrom, Fellow IEEE , and Dmitri E. Nikonov, Senior Member IEEE ABSTRACT | We aim to provide engineers with an introduction I. INTRODUCTION to the nonequilibrium Green’s function (NEGF) approach, which Semiconductor devices ope