直接氮化法制备氮化铝纳米线.pdfVIP

第29 卷 第2期 总第130期 V o l29 N o2 J ournal of M at erials Science Engineering A pr . 20 11 : 2011) ( 450052) ( 10% ) ( SEM ) X ( XR D) ( T EM ) ; ( ) A lN A lN V aporSolid ( V S ) V S ; ; ; : T B383 : A Synthesis of AlN Nanowires Via aDirect Nitridation Method WAN Wenwen, CHEN Renzhi, HU Xiaoyang, ZHAN Yingjiu, SON Pingxin, TIAN Yongtiao, LI Xinjian (Department of physics andkey laboratory of Material physics of EducationMinistry, ZhengzhouUniversity, Zhengzhou 450052, China) Abstract A lN nano w ir es w ere sy nt hesized by direct nitr idation w ith A lN H 4 Cl as st art ing mixt ure. T he nit ridat ion exp eriment s w er e carried out in a horizo nt al t ube f ur nace and in a N2 and H 2 mixt ure g as f low ( 10 vol% H 2 ) . T he A lN nanow ires w ere investig at ed u sing Xr ay dif fr act omet ry ( X RD) scan el ectr on micro scopy ( SEM) high r esolutio n tr an sm issio n electr on microscopy ( H REM ) . T he eff ect s of t emp er at ure temp erat ure rising rat e and ratio of A lN H 4 Cl ( w t% ) on t he t ypes and m orpho logies of t he pr odu ct s and t he yields of the A lN nano w ires w ere st u died. T he result s indicat e th at the sy nt hesized A lN nanow ire h as hex agonal single cry st al st ru ct ur e co ver ed w it h a thin am orpho us layer and the grow t h of t he A lN nanow ires is based on a v apor solid ( V S) mech anism . T he optim iz ed sy nt hesis f act ors o f t he A lN nanow ir es have been obtained and the ef f ects of t he above facto rs o n t he g row t h of the A lN nanow ires are p