《A IO-MHz SOl-Based Face Shear Square Micromechanical Resonator》.pdfVIP

JOURNALOFELECTRONICSCIENCEANDTECHNOLOGY,VOL 12，NO．1，MARCH2014 A 10一M HzSO1一BasedFaceShearSquare JlVli■crom eCn1anl●Cal1K1eS0nat0r Tan-LocNguyen，Jing—FuBao，Jun-W enJiang，YuanLing，andXin—YiLi Abstrac手—A 10．MHzfaceshear(FS)squaremicro— whilemotionalresistance )stilldecreases．In 2004， mechanicalresonatorbasedonsilicon—on-insulatorrSOI1 Kaajakarietal,t2]reportedna electrostatically订ansduced technology is presented in this paper． In order to squrae—extensionalfSE)modewhichachievesaQ of exam inetheimorovementofquality factoraswellas 130000 atrfequency ofl3．1MHz．A 5．166．MHzwine motionalresistance inthisstructure，thecenter-stem glassmodesquareresonatorwasinvestigated in 2009LjJ． anchor is employed in this study．The benefitof Thisresearch achieved the impressive D value Of3．7 anchoringthesquarein theeente~which isthenodal millionatapressureof33mtorr，whichcorrespondstoa point．isthattheenergylossesthroughtheanchorcan frequency-Q (厂_Q)productof1．9×10”．Afaceshera (FS) be m inimized．Hence．a quality factor value of2．0 modesquraemicromechanicalresonatorwassutdiedhte million andthemotionalresistanceof8．2l‘【lcanbe first time by Lin et a1． in 2010 J．This resonator obtainedwithanFS moderesonatorviafiniteelement demonstratesaresonantrfequencyof3．638MHz，aQ (FE)simulation．Theresultsshowthesignificanceofthe valueof 1l193in airand836283 invacuum．A11these FSmodeinthisdesign．notonlyinitsstructurebutalso effortsraeaimedatachievinghighO，whichisoneofhte in its square．extensional mode and Lame—mode． mostimportantparametersthatdirectly affectmotional Additionally, an SOI．based fabrication process is