《Analysis and design of resistance-wire heater in MOCVD reactor》.pdfVIP

《Analysis and design of resistance-wire heater in MOCVD reactor》.pdf

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《Analysis and design of resistance-wire heater in MOCVD reactor》.pdf

J.Cent.SouthUniv.(2014)21:3518-3524 垒Springer DoI:10.1007/sl1771—014—2331.7 Analysisanddesignofresistance—wireheaterinM OCVD reactor QUYu.xuan(~ ),WANGBin(王斌),HUShi.gang(胡仕刚),WUXiao.feng(吴笑峰), LIZhi—ming(李志明),TANGzhi_jun(唐志军),LIJin(~劲),HUYing.1u(胡莹璐) 1.AdvancedTechnologyGeneralizationInstituteofCNGC,Beijing100089.China; 2.TheCenterofCoordinationandSupportofStateAdministrationofScience, TechnologyandIndustryforNationa1Defence,Beijing100081,China; 3.Schoo1ofInformationandElec仃ica1Engineering,HunanUniversityofScienceandTechnology, Xiangtan411201.China; 4.SchoolofInformationScienceandEngineering,Universiyt ofJinan,Ji’nan250022,China; 5.The41stInstiutteofChinaElectronicsTechnologyGroupCorporation,Qingdao266555,China ◎CentralSouthUniversitVPressandSpringer-VerlagBerlinHeidelberg2014 Abstract:Meta1organicchemicalvapordeposition(MOCVD)isakeyequipmentinthemanufacturingofsemiconductor optoelectronicdevicesandmicrowavedevicesinindustry.Heatingsystem isavitalpartofM0CVD.Specificheatingdeviceand therrnalcontro1technology areneededforeachnew reactordesign.Byusingresistance—wireheatingMOCVD reactionchamber mode1.thermalanalysisandstrucutreoptimizationofthereactorweredevelopedfrom theverticalpositionandthedistancebetween coilsoftheresistance-wireheater.Itisindicatedthat,withinacertainrange,theaveragetemperautreofthegraphitesusceptorvaries linearlywiththeverticaldistanceofheaterto susceptor,andwith thechangeddistancesbetween thecoils;furthermore,single resistna ce.wireheatershouldbeplacedlooselyintheintemalandtightlyintheexterna1.Themodulateaccuracyofthetemperature fieldapproximatelyequalsthechangeoftheaveragetemperaturecorrespondingtothechangeofthecoilposition. Keywords

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