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《Analysis and design of resistance-wire heater in MOCVD reactor》.pdf
J.Cent.SouthUniv.(2014)21:3518-3524 垒Springer
DoI:10.1007/sl1771—014—2331.7
Analysisanddesignofresistance—wireheaterinM OCVD reactor
QUYu.xuan(~ ),WANGBin(王斌),HUShi.gang(胡仕刚),WUXiao.feng(吴笑峰),
LIZhi—ming(李志明),TANGzhi_jun(唐志军),LIJin(~劲),HUYing.1u(胡莹璐)
1.AdvancedTechnologyGeneralizationInstituteofCNGC,Beijing100089.China;
2.TheCenterofCoordinationandSupportofStateAdministrationofScience,
TechnologyandIndustryforNationa1Defence,Beijing100081,China;
3.Schoo1ofInformationandElec仃ica1Engineering,HunanUniversityofScienceandTechnology,
Xiangtan411201.China;
4.SchoolofInformationScienceandEngineering,Universiyt ofJinan,Ji’nan250022,China;
5.The41stInstiutteofChinaElectronicsTechnologyGroupCorporation,Qingdao266555,China
◎CentralSouthUniversitVPressandSpringer-VerlagBerlinHeidelberg2014
Abstract:Meta1organicchemicalvapordeposition(MOCVD)isakeyequipmentinthemanufacturingofsemiconductor
optoelectronicdevicesandmicrowavedevicesinindustry.Heatingsystem isavitalpartofM0CVD.Specificheatingdeviceand
therrnalcontro1technology areneededforeachnew reactordesign.Byusingresistance—wireheatingMOCVD reactionchamber
mode1.thermalanalysisandstrucutreoptimizationofthereactorweredevelopedfrom theverticalpositionandthedistancebetween
coilsoftheresistance-wireheater.Itisindicatedthat,withinacertainrange,theaveragetemperautreofthegraphitesusceptorvaries
linearlywiththeverticaldistanceofheaterto susceptor,andwith thechangeddistancesbetween thecoils;furthermore,single
resistna ce.wireheatershouldbeplacedlooselyintheintemalandtightlyintheexterna1.Themodulateaccuracyofthetemperature
fieldapproximatelyequalsthechangeoftheaveragetemperaturecorrespondingtothechangeofthecoilposition.
Keywords
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