《Analytical modeling of subthreshold current and subthreshold swing of Gaussian- doped strained-Si-on-insulator MOSFETs》.pdfVIP

Vo1．35，No．8 JournaIofSemiconductors Auoust2O14 Analyticalmodelingofsubthresholdcurrentand subthreshold swingofGaussian- dopedstrained-Si一0n—insulat0rM OSFETs GopalRawat一，SanjayKumar，EktaGoel，MirgenderKumar，SarveshDubey2，andS．Jit DepartmentofElectronicsEngineering，IndianInstituteofTechnology(BHU)，Varanasi，India 2FacultyofElectronicsandCommunicationEngineering ShriRamswaroopM emorialUniversity,Lucknow—DevaRoad，India ， Abstract：Thispaperpresentstheanalyticalmodelingofsubthresholdcurrentandsubthresholdswingofshort． channelfully—depleted(FD)strained—Si—on—insulatorfSS0I)MOSFETshavingverticalGaussian—likedopingpro． fileinthechanneI．Thesubthresholdcurrentandsubthresholdswinghavebeenderivedusingtheparabolicapprox． imationmethod．Inadditiontothee ctofstrainonsiliconlayer．variousotherdeviceparameterssuchaschannel length(L)，gate—oxidethickness(tox)，strained—Sichannelthickness(fs—Si)，peakdopingconcentration(Np)，project range(Rp)andstraggle(O-p)oftheGaussianprofilehavebeenconsideredwhilepredictingthedevicecharacteris- tics．Thepresentworkmayhelptoovercomethedegradationinsubthresholdcharacteristicswithstrainengineering． Thesesubthresholdcurrentandswingmodelsprovidevaluableinformationforstrained—SiMOSFETdesign．Ac． curacyoftheproposedmodelsisverifiedusingthecommerciallyavailableATLASFM atwo—dimensional(2D1 devicesimulatorfrom SILVAC0． Keywords：strained—Si—on—insulatorfSSOI)；Poisson’ssolution；short—channel—effects DoI：10．1088／l674—4926／35／8／084001 EEACC：2570 1．IntrOductiOn