《n-Si （metal-insulator-semiconductor） structures》.pdf

Chin．Phys．B Vo1．22，No．11(2013)117310 Temperature·dependentdielectricpropertiesof Au／Si3N4／n-Si(metal-insulator-semiconductor)structures术 T．Ataseven andA．1’ataro lu十 PhysicsDepartment,FacultyofSciences，GaziUniversity,Teknikokullar,Ankara06500，Turkey (Received20January2013；revisedmanuscriptreceived7May2013) ThedielectricpropertiesofAu／Si3N4／n—Si(MIS)structuresarestudiedusingtheadmittancemeasurementsf(1一 and G／∞—V)eachasafunctionoftemperatureinarangefrom80Kto400Kfortworfequenciesf100kHzand1MHz)． Experimentalresultsshowthatboththedielectricconstant(￡)andthedielectricloss(8，]increasewithtemperaturein— creasinganddecreasewithrfequencyincreasing．Themeasurementsalsoshowthattheacconductivity(aac)increaseswith temperatureandrfequencyincreasing．The1n0cversus1000／Tplotshowstwolinearregionswithdifferentslopeswhich correspondtolow (120K-240K)andhigh(280K—400K)temperaturerangesforthetwofrequencies．Itisfoundthat activationenergyincreaseswithrfequencyandtemperatureincreasing． Keywords：Au／Si3N4／n—Si(metal-insulator-semiconductor)structure，admittancemeasurements，dielectric properties，acconductivity PACS：73．40．Qv，84．37．+q，77．22，Ch，72．20．-i DOh 10．1088／1674—1056／22／11／117310 1．Introduction dependencesofelectricaland dielecrtic propertiesofthe Themetal-semiconductor(MS)structurehasbecomean Au／Si3N4／n—Si(MIS)structures．Thecapacitance-voltage(c- importantandessentialpartofsemiconductordevices，and V)andconductance—voltage(a／o—v1characteristicshave studiesofitraevitaltothedevelopmentoftechnology．l【一8】 beenmeasuredinarfequencyrangeof1kHz-1MHzatroom