Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam》.pdf

Nuclear Instruments and Methods in Physics Research B 348 (2015) 233–239 Contents lists available at ScienceDirect Nuclear Instruments and Methods in Physics Research B journal homepage: www.else /locate/nimb Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam ˇ ´ a,⇑ b a c d Zeljko Pastuovic , Ivana Capan , David D. Cohen , Jacopo Forneris , Naoya Iwamoto , Takeshi Ohshima d, Rainer Siegele a, Norihiro Hoshino e, Hidekazu Tsuchida e a Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232, Australia b Material Physics Division, Institute Rudjer Boskovic, PO Box 180, 10000 Zagreb, Croatia c Physics Department and NIS Excellence Centre, University of Torino, via P. Giuria 1, 10125 Torino, Italy dJapan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan e Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan a r t i c l e i n f o a b s t r a c t Article history: We studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and Received 11 August 2014 spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (4 1014 cm3 ) Received in revised form 18 December 2014 epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 Accepted 23 December 2014 2+