Radiation induced deep level defects in bipolar junction transistors under various bias conditions》.pdf

Nuclear Instruments and Methods in Physics Research B xxx (2015) xxx–xxx Contents lists available at ScienceDirect Nuclear Instruments and Methods in Physics Research B journal homepage: www.else /locate/nimb Radiation induced deep level defects in bipolar junction transistors under various bias conditions Chaoming Liu a, Jianqun Yang a, Xingji Li a,⇑, Guoliang Ma a, Liyi Xiao b, Joachim Bollmann c a School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China b Department of Astronautics, Harbin Institute of Technology, Harbin 150001, China c Institute of Electronics and Sensor Materials, TU Bergakademie Freiberg, 71691, Germany a r t i c l e i n f o a b s t r a c t Article history: Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In Received 1 October 2014 this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and Received in revised form 10 April 2015 PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with Accepted 15 July 2015 increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects Available online xxxx in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the Keywords: concentration of deep leve