Reactive deposition of cobalt using bis(2,2,6,6-tetramethyl-3,5-heptanedionato) cobalt(II) from supercritical carbon dioxide》.pdf

J. of Supercritical Fluids 107 (2016) 189–195 Contents lists available at ScienceDirect The Journal of Supercritical Fluids j o u r n a l h o me p a ge : w w w. elsev /locate/supflu Reactive deposition of cobalt using bis(2,2,6,6-tetramethyl-3,5-heptanedionato) cobalt(II) from supercritical carbon dioxide Masashi Haruki a,b,∗ , Shengkai Li a , Gang Qian a , James J. Watkins a,∗ a Department of Polymer Science and Engineering, University of Massachusetts, Amherst, MA 01003, USA b Department of Chemical Engineering, Graduate School of Engineering, Hiroshima UniversityJapan, 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527, Japan a r t i c l e i n f o a b s t r a c t Article history: Cobalt depositions from supercritical carbon dioxide (scCO2 ) were conducted on various surfaces includ- Received 9 May 2015 ing the native oxide surface of silicon wafers, tantalum nitride (TaN), carbon, and copper in a cold-wall Received in revised form 7 September 2015 reactor using bis(2,2,6,6-tetramethyl-3,5-heptanedionato) cobalt(II) as the precursor. Deposition onto Accepted 7 September 2015 ◦ TaN barrier layers at temperature above 300 C yielded high purity cobalt films as determined by X-ray Available online 11 September 2015 photoelectron spectroscopy with grain sizes of 200 nm or less. The volume resistivities, of about 200 nm thick films estimated from the surface resis