Lecture12-SmallSignalModel-BJT.pptx.PDFVIP

EE105 – Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) Lecture12-Small Signal Model-BJT 1 Introduction to Amplifiers •  Amplifiers: transistors biased in the flat-part of the i-v curves –  BJT: forward-active region –  MOSFET: saturation region •  In these regions, transistors can provide high voltage, current and power gains •  Bias is provided to stabilize the operating point (the Q-Point) in the desired region of operation •  Q-point also determines –  Small-signal parameters of transistor –  Voltage gain, input resistance, output resistance –  Maximum input and output signal amplitudes –  Power consumption Lecture12-Small Signal Model-BJT 2 1 Transistor Amplifiers BJT Amplifier Concept The BJT is biased in the active region by dc voltage source VBE. e.g., Q-point is set at (I , V ) = (1.5 mA, 5 V) with I = 15 µA (β = 100) C CE B F Total base-emitter voltage is: vBE = VBE + vbe Collector-emitter voltage is: v = V – i R This is the load line CE CC C C equation. Lecture12-Small Signal Model-BJT 3 Transistor Amplifiers BJT Amplifier (cont.) If changes in operating currents and voltages are small enough, then i and v waveforms are C CE