氧化钛薄膜生长和铁电集成性研究.pdf

ABSTRACT ABSTRACT as BST third ferroelectricmaterialssuch andthe Typical generation semiconductorssuchasGaNwerethe most functionalmaterials，have important in stimulatedinterest theirattractive for exploiting physicalpropertiesapplications． informationare tofurthermicromation Recently,electronicsystemsquicklydeveloped inordertoenhance lower and and integrationdensity higher reliability,realizevelocity GaN devicesbetweenBSTand couldbefabricated power integrated consumption．nle solid the BST／GaN by films ferroelectric depositing alternately,andintegrated have multifunction acceleratethe all—in-oneof heterojunction，which properties，could miniaturizationandmonolithic ofelectronic development BSTand GaNhave differentkindsof with lattice wurtzite lattice absolutely erystal large fabricationtechnicsare differentfromeach mismatch,otherwise，the greatly other,BST filmswere at under GaN depositedhi曲temperatureoxygenatmosphere，while