ASurveyoftheAnneal-InducedValenceBandOffset.PDFVIP

ISSN- 3967-0867 JOURNAL OF ELECTRONICS AND COMPUTER SCIECNE A Survey of the Anneal-Induced Valence Band Offset Improvement 1. T.Murugajothi, Assistant Professor, PSNA College Of Engineering and Technology,TamilNadu,India. 2. R.Rajakumari, Assistant Professor, PSNA College Of Engineering and Technology,TamilNadu,India. jothyece@, rajii.kumari@ Abstract— Controlling threshold voltage variation during fab-rication is essential, and one source for the variation is the thermal instability of valence band offset (VBO) for HfO2 deposited on Si. It has been reported that VBO can be changed as much as 0.33–0.60 eV after annealing. This paper proposes a hybrid process with both H O and ozone as 2 oxygen source during the deposition of HfO2 film. X-ray photoelectron spectroscopy shows that the VBO of this hybrid- fabricated film changes as little as 0.02 eV after a 600 °C anneal, which is compatible with the gate-last process. The improved stability is further confirmed by the V extracted from the C–V measurement. The physical processes that may FB be responsible for this improvement are discussed. Index Terms— Dipoles, HfO , hybrid process, valence band offset (VBO). 2 I. INTRODUCTION HF-BASED dielectrics have been extensively investigated and have been used for sub-45 nm CMOS processes because of their high dielectric constant, large bandgap, and good thermodynamic stability in contact with Si [1], [2]. For the gate -last process, an anneal at up to 60