EffectsofFormingGasAnnealonUltrathinInGaAs.PDFVIP

Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters. Citation Si, Mengwei, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy Gerald Gordon, and Peide D. Ye. 2013. Effects of forming gas anneal on ultrathin InGaAs nanowire metal- oxide-semiconductor field-effect transistors. Applied Physics Letters 102(9): 093505. Published Version doi:10.1063/1.4794846 Accessed January 1, 2016 12:11:20 PM EST Citable Link /urn-3:HUL.InstRepos Terms of Use This article was downloaded from Harvard Universitys DASH repository, and is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at /urn-3:HUL.InstRepos:dash.current.terms-of- use#OAP (Article begins on next page) Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide- Semiconductor Field-Effect Transistors Mengwei Si 1), Jiangjiang J. Gu 1), Xinwei Wang 2) 4), Jiayi Shao 3), Xuefei Li 1), Michael 1) 3) 5) 2) 1) a) J. Manfra , Roy G. Gordon , and Peide D. Ye 1) School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, U.S.A. 2) Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, U.S.A. 3) Department of Physics, Pu