Influenceofpost-annealingontheoffcurrentofMoS2field.PDFVIP

Namgung et al. Nanoscale Research Letters (2015) 10:62 DOI 10.1186/s11671-015-0773-y NANO EXPRESS Open Access Influence of post-annealing on the off current of MoS2 field-effect transistors 1,2 1,2 2 1,2 1,2 1,2* Seok Daniel Namgung , Suk Yang , Kyung Park , Ah-Jin Cho , Hojoong Kim and Jang-Yeon Kwon Abstract Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS2 is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the MoS2 field-effect transistor (FET) as a function of post-annealing temperature. The results indicate that the off current drastically decreased at 200°C and increased at 400°C while other factors, such as the mobility and threshold voltage, show little variation. We consider that the decreasing off current comes from the rearrangement of the MoS2 film and the elimination of the surface residue. Then, the increasing off current was caused by the change of the materials composition and adsorption of H2O and O2. Keywords: Molybdenum disulfide; MoS2; Field-effect transistors; On/off current ratio; Field-effect mobility Background have recorded an electron mobility of 200 cm2/Vs, Two-dimensional (2D) materials, such as graphene and which is higher than that of band gap-engineered gra- transition metal dichalcogenides (MoS , MoSe , WS , phene [21].