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Influenceofpost-annealingontheoffcurrentofMoS2field.PDF
Namgung et al. Nanoscale Research Letters (2015) 10:62
DOI 10.1186/s11671-015-0773-y
NANO EXPRESS Open Access
Influence of post-annealing on the off current of
MoS2 field-effect transistors
1,2 1,2 2 1,2 1,2 1,2*
Seok Daniel Namgung , Suk Yang , Kyung Park , Ah-Jin Cho , Hojoong Kim and Jang-Yeon Kwon
Abstract
Two-dimensional mat
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