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H. Väinölä, A. Haarahiltunen, E. Saarnilehto, M. Yli-Koski, J. Sinkkonen, and O. Anttila, Enhancement of internal gettering efficiency of iron by low temperature nucleation, The Electrochemical Society Proceedings Vol. 05, High purity silicon VIII, Editors: C. L. Claeys, M. Watanabe, R. Falster and P. Stallhofer, p 160-164 (2004). © 2004 The Electrochemical Society (ECS) Reproduced by permission of The Electrochemical Society (ECS). ENHANCEMENT OF INTERNAL GETTERING EFFICIENCY OF IRON BY LOW TEMPERATURE NUCLEATION H.Väinölä, A. Haarahiltunen, E. Saarnilehto, M. Yli-Koski, and J. Sinkkonen Helsinki University of Technology, Electron Physics Laboratory, P.O. BOX 3500, FIN- 02015 HUT, Finland O. Anttila Okmetic Oyj, P.O.BOX 44, FIN-01301 Vantaa, Finland In order to better understand internal gettering of iron in silicon at low supersaturation, an experimental study of iron gettering with different annealing profiles was performed. Special attention was paid to the effect of iron nucleation at low temperatures. The results reveal that gettering can be efficient even after 30 minutes anneal at 700°C if the wafers go through a low-temperature region before the actual gettering anneal. In the simplest case the low-temperature nucleation can be realized by a fast withdrawal of the wafers out of the furnace. The density of oxygen precipitates seemed to have only a minor impact on the gettering efficiency indicating that not every oxygen precipitate related gettering site is an active sink for iron.