Talk_ASU_short.pptVIP

Wide Bandgap and Other Non-III-V RF Transistors: Trends and Prospects The Characteristic Frequencies fT and fmax The Evolution of RF Transistors Properties of 2DEGs RF MOSFETs – Does This Work? MOSFET Scaling Two Problems: Mobility and Gate Resistance RF Si MOSFET Performance: Frequency Limits RF Power MOSFETs - Si LDMOSFET Conclusion Conclusion HBT - Basic Concept AlGaAs/GaAs HBT Emitter efficiency Ge In, Ip - electron and hole diffusion currents across the EB junction For HBTs (smooth EB junction) For BJTs SiGe HBT 33 Performance of SiGe HBTs fT and fmax Reported fmax vs. fT fT fmax GHz GHz 350 170 IBM 2002 207 285 IBM 2002 194 270 IBM 2002 270 260 IBM 2002 200 170 IHP 2002 160 185 IHP 2002 180 338 IBM 2003 34 Performance of SiGe HBTs - fT vs. BVCE0 SiGe HBTs show considerably lower BVCE0 than III-V HBTs. The low breakdown voltage is a serious obstacle for high-power SiGe HBTs. 35 Traditional opinion: The Si MOSFET is a slow device not suitable for RF operation Truth: - The Si MOSFET is commonly slower than a III-V FET with comparable gate length - VLSI electronics: Continuous scaling, i.e., shrinking of MOSFET size (gate length) - Continuous scaling made Si MOSFETs not only smaller, but also much faster Today: The submicron MOSFET is capable of GHz operation! 36 Evolution of Si VLSI: Moores Law Minimum feature size and memory bits per chip vs year New MOSFET concepts for future generations Intels new Trigate MOSFETs 37 NEC IEDM Dec. 2003 5nm MOSFET Mobility Mobility in MOSFET channels is relatively low because the bulk mobility of Si is by nature lower than in III-V semiconductors the inversion channel is located at the Si/SiO2 interface, additional decrease of the mobility due to interface scattering Gate Resistanc