《bonding mapping》.pdfVIP

JOURNAL OF APPLIED PHYSICS 105, 034311 2009 Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth: An approach to interfacial chemistry analysis via chemical bonding mapping X. Y. Zhong,1,a Y. C. Chen,2 N. H. Tai,2 I. N. Lin,3 J. M. Hiller,1 and O. Auciello1,4 1 Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA 2 Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan 3 Department of Physics, Tamkamg University, Tamsui 251, Taiwan 4 Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA Received 8 September 2008; accepted 6 December 2008; published online 10 February 2009 The effect of pretreatment bias on the nucleation and growth mechanisms of the ultrananocrystalline diamond UNCD films on the Si substrate via bias-enhanced nucleation and bias-enhanced growth BEN-BEG was investigated using cross-sectional high-resolution transmission electron microscopy, chemical bonding mapping, and Raman spectroscopy. The mirror-polished substrate surface showed the formation of a triangular profile produced by a dominant physical sputtering mechanism induced by ion bombardment of ions from the hydrogen plasma accelerated toward the substrate due to biasing and a potential hydrogen-induced chemical reaction component before synthesizing the UNCD films. The BEN-BEG UNCD films grown on the Si substrate with biased and unbiased pretreatments in the hydrogen plasma were compared. In the case of the bias-pretrea