《2010 IEEE International》.pdf

2010 IEEE International Reliability Physics Symposium (IRPS 2010) Anaheim, California, USA 2-6 May 2010 Pages 1-598 IEEE Catalog Number: CFP10RPS-PRT ISBN: 978-1-4244-5430-3 1 /2 TABLE OF CONTENTS ESREF BEST PAPER ESREF A Review on the Reliability of GaN-Based Laser Diodes 1 Nicola Trivellin, Matteo Meneghini, Enrico Zanoni, Kenji Orita, Masaaki Yuri, Gaudenzio Meneghesso SESSION 2A: TRANSISTORS: BTI, HOT CARRIER 2A.1 The Statistical Analysis of Individual Defects Constituting NBTI and Its Implications for Modeling DC- and AC-Stress 7 Hans Reisinger, Tibor Grasser, Wolfgang Gustin, Christian Schlünder 2A.2 The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability 16 T. Grasser, H. Reisinger, P.-J. Wagner, F. Schanovsky, W. Goes, B. Kaczer 2A.3 Origin of NBTI Variability in Deeply Scaled pFETs 26 B. Kaczer, T. Grasser, J. Roussel, J. Franco, R. Degraeve, L.-A. Ragnarsson, E. Simoen, G. Groeseneken, H. Reisinger 2A.4 Two Independent Components Modeling for Negative Bias Temperature Instability 33 Vincent Huard 2A.5 Recovery-Free Electron Spin Resonance Observations of NBTI Degradation 43 J. T. Ryan, P. M. Lenahan, T. Grasser, H. Enichlmair SESSION 2B: TRANSISTORS BTI, HOT CARRIERS 2B.1 PBTI Relaxation Dynamics After AC Vs. DC Stress in High-k/Metal Gate Stacks 50 K. Zhao, J. H. Stathis, A. Kerber, E. Cartier 2B.2 Off State Incorporation into the 3 Energy Mode Device Lifetime Modeling for Advanced 40nm CMOS Node 55 A. Bravaix, C. Guérin, D. Goguenheim, V. Huard, D. Roy, C. Besset, S. Renard, Y. Mamy Randriamihaja, E. Vincent 2B.3 Mobility Enhancement Due to Charge Trapping Defect Generat