Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide.pdfVIP

Hindawi Publishing Corporation Advances in Condensed Matter Physics Volume 2012, Article ID 439617, 10 pages doi:10.1155/2012/439617 Research Article Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide Marina G. Mynbaeva,1 Evgeny L. Pankratov,2 Evgeniy N. Mokhov,1 and Karim D. Mynbaev1 1 Ioff e Physical-Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya Street St., Petersburg 194021, Russia 2 Mathematical Department, Faculty of Radiophysics, Nizhny Novgorod State University, 65 Il’insky Street, Nizhny Novgorod 603950, Russia Correspondence should be addressed to Karim D. Mynbaev, mynkad@mail.ioffe.ru Received 5 March 2012; Revised 1 June 2012; Accepted 15 June 2012 ¨ Academic Editor: Jorg Fink Copyright © 2012 Marina G. Mynbaeva et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200◦C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory description of dopant diffusion. As expected, important contribution to the diffusion in the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface diffusion coefficient on the walls appears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channels into closed voids, pathways for accelerated diffusion cease to exist and diffusion rates in porous and nonporous SiC become similar.