在高ECR 等离子体密度下沉积高质量氮化镓薄膜(英文).pdfVIP

DOI : 10 . 15918/ j .j bi t1004 -0579 . 1999 . 04 . 008 Jour n al of Beijin g I nst itute of Technology , 1999 , V ol . 8, No . 4 Dep osition of High Quality GaN Film Under High ECR Plasma Den sity Du Xiaolong1 　Chen Guangch ao 　Yao Xinzi 　Zhu Hesun1 ( 1 Cent er for Research on Mat erials Science, Beijing Institut e of T echnology , Beijin g 1000 81) ( In st itut e of Physics , Chinese A cademy of Scien ces, Beijing 1000 80) Abstr act　A im 　To invest igate the influ en ce of ion den sity( n ) on th e deposition of wur tzit e i GaN films on the substrate of α- Al O ( 0001) by electron cyclotron reson an ce plasma. Meth od s 3 Langmuir prob e measurement , Doub le cryst al X- ray diffract ion an d H all measurement were u sed . Result s　The qu ality of GaN film strongly depen ded on its grow th con dition . The high er ion density result ed in a higher amount rat io of N/ Ga an d a low er backgroun d electron concen- 11 - 3 tration of GaN film . Wh en the GaN w as prepared in the ion density of . 0 ×10 cm , th e 18 - 3 amount rat io of N/ Ga was close to 1 , th e electron backgroun d density was 3. 7 ×10 cm and it s full width at half magnitude( FWHM) w as 16 arcmin . Conclus