半导体涂层绝缘子的污闪特性.pdfVIP

39 卷 9 期 电 网 技 术 Vol. 39 No. 9 20 15 年9 月 Power System Technology Sep. 20 15 文章编号：1000-3673 （20 15）09-2633-07 中图分类号：TM 852 文献标志码：A 学科代码：470 40 半导体涂层绝缘子的污闪特性 贾志东，胡亚荣，关志成，韦晓星 （清华大学 深圳研究生院，广东省 深圳市 518055 ） AC Pollution Flashover Performance of Insulator Strings Partially Treated With Semiconductive RTV Coating JIA Zhidong, HU Yarong, GUAN Zhicheng, WEI Xiaoxing (Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055, Guangdong Province, China) ABSTRACT: Icing problem has threaten the power system for 能够安全运行，对不同涂层阻值和不同涂层涂覆结构的 decades. Semi-conductive RTV coating has already been 110 kV 绝缘子串进行一系列的污闪试验。试验采用固体涂 proved to be a good solution to anti-icing issues, which could 层法，通过测定 50%耐受电压来评估半导体涂层绝缘子的 be treated partially on insulators ’ surface so that water film 污闪特性。试验结果表明：50%耐受电压受涂层阻值和涂层 could be heated and vaporized by the thermal effect of leakage 涂覆结构的影响。部分涂覆半导体涂层绝缘子的 50%耐受 current. In order to study the operation security of insulator 电压与盐密仍然基本符合负幂指数关系，盐密对半导体涂层 strings partially treated with semi-conductive RTV coating 绝缘子的影响要低于其对无涂层绝缘子的影响；在相同的涂 under contaminated condition, a series of pollution flashover 层涂覆结构下，下表面涂层阻值越大，50%耐受电压越高。 performance tests on 110 kV insulator string specimens with 在相同的涂层阻值下，50%耐受电压与上表面涂层涂覆范围 different resistivity and configuration of semi-conductive RTV 基本呈线性关系，上表面涂覆范围越大，50%耐受电压越低。 coating were conducted and analyzed in this paper. The 基于以上试验结果，从污闪特性的角度给出了半导体涂层的 pollution flashover characteristic of insulators treated with 优化建议。 semi-conductive RTV coating were assessed by the 50%