High-mobility and low-power thin-film transistors based on.pdfVIP

ARTICLE Received 27 Feb 2012 | Accepted 23 Jul 2012 | Published 21 Aug 2012 DOI: 10.1038/ncomms2018 High-mobility and low-power thin-film transistors based on multilayer mos crystals 2 1,2 3 3 4 1 4 sunkook Kim , Aniruddha Konar , Wan-sik Hwang , Jong Hak Lee , Jiyoul Lee , Jaehyun Yang , 1 4 4 1 1 1 Changhoon Jung , Hyoungsub Kim , Ji-Beom Yoo , Jae-Young Choi , Yong Wan Jin , sang Yoon Lee , 3 1,5 1 Debdeep Jena , Woong Choi Kinam Kim unlike graphene, the existence of bandgaps (1–2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of process- friendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities ( 100 cm2 V − 1 s − 1), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on shockley’s long-channel transistor model and calculations of scattering mechanisms, thes