光刻工艺光刻胶解读.pptVIP

显影液不易进入正胶的未曝光部分，正胶光刻后线条不变形。显影液会使负胶膨胀，线条变宽。虽然烘烤后能收缩，但易变形。所以负胶不适合2.0微米以下工艺使用。正胶是ULSI的主要光刻胶。 正胶的针孔密度低，但对衬低的粘附差，通常用HMDS作增粘处理。负胶对衬底粘附好，针孔密度较高。 3.正胶耐化学腐蚀，是良好的掩蔽薄膜。 两种光刻胶的性能 两种光刻胶的性能 两种光刻胶的性能 正胶 优点 分辨率高、对比度好 缺点 粘附性差、抗刻蚀能力差、高成本 灵敏度 曝光区域光刻胶完全溶解时所需的能量 负胶 优点 良好的粘附能力和抗刻蚀能力、感光速度快 缺点 显影时发生变形和膨胀，导致其分辨率 灵敏度 保留曝光区域光刻胶原始厚度的50%所需的能量 DUV深紫外光刻胶 传统DNQ胶的问题： 1、对于i线波长的光强烈吸收 2、汞灯在DUV波段输出光强不如i线和g线，因此灵敏度不够 3、量子效率提高有限（最大为1，一般0.3) 原理：入射光子与PAG分子反应，产生酸分子，在后续的烘烤过程中，酸分子起催化剂作用，使曝光区域光刻胶改性 总量子效率1，因此DUV胶的灵敏度有很大提高。 g线、i线光刻胶灵敏度为100 mJ/cm-2，DUV胶为20－40 mJ/cm-2 化学增强光刻胶 PAG (photo-acid generator) DUV胶化学增强的基本原理 要求对于环境和工艺参数控制严格，PEB 温度控制在几分之一度。 PAG INSOL INSOL 聚合物长链 酸 INSOL INSOL 聚合物长链 SOL SOL 聚合物长链 酸 SOL INSOL 聚合物长链 酸 酸 曝光 曝光后烘烤 （PEB） 酸 EUV Lithography—The Successor to Optical Lithography? Abstract This paper discusses the basic concepts and current state of development of EUV lithography (EUVL), a relatively new form of lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometer (nm) to carry out projection imaging. Currently, and for the last several decades, optical projection lithography has been the lithographic technique used in the high-volume manufacture of integrated circuits. It is widely anticipated that improvements in this technology will allow it to remain the semiconductor industry’s workhorse through the 100 nm generation of devices. However, some time around the year 2005, so-called Next-Generation Lithographies will be required. EUVL is one such technology vying to become the successor to optical lithography. Why EUVL? In order to keep pace with the demand for the printing of ever smaller features, lithography tool manufacturers have found it necessary to gradually reduce the wavelength of the light used for imaging and to design imaging systems with ever larger numerical apertures. The reasons for these changes can be understood from the following equations that describe two of the most fundamental characteristics of an imaging system: it