a scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip：扫描显微镜技术与尖端的集成场效应晶体管的电容耦合.pdfVIP

Ultramicroscopy 159 (2015) 1–10 Contents lists available at ScienceDirect Ultramicroscopy journal homepage: /locate/ultramic A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip Kumjae Shin a, Dae sil Kang a, Sang hoon Lee b, Wonkyu Moon a,n a Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Republic of Korea b Department of Mechanical and Automotive Engineering, Seoul National University of Science and Technology (SeoulTech), Republic of Korea a r t i c l e i n f o a b s t r a c t Article history: We propose a method for measuring the capacitance of a thin layer using a Tip-on-Gate of Field-Effect Received 25 July 2014 Transistor (ToGoFET) probe. A ToGoFET probe with a metal–oxide–semiconductor field-effect transistor Received in revised form (MOSFET) with an ion-implant channel was embedded at the end of a cantilever and a Pt tip was fab- 7 July 2015 ricated using micro-machining. The ToGoFET probe was used to detect an alternating electric field at the Accepted 23 July 2015 dielectric surface. A dielectric buried metal sample was prepared; a sinusoidal input signal was applied to Available online 26 July 2015 the buried metal lines; and the ToGoFET probe detected the electric field at the tip via the dielectric. The Keywords: AC signal detected by the ToGoFET probe w