半导体工艺及其器件模拟二(新).ppt

半导体工艺及器件模拟 半导体器件电学仿真 DESSIS 半导体器件电学仿真 DESSIS 半导体器件电学仿真 DESSIS DESSIS simulates numerically the electrical behavior of a single semiconductor device in isolation or several physical devices combined in a circuit. Terminal currents [A], voltages [V], and charges [C] are computed based on a set of physical device equations that describes the carrier distribution and conduction mechanisms. A real semiconductor device, such as a transistor, is represented in the simulator as a ‘virtual’ device whose physical properties are discretized onto a nonuniform ‘grid’ of nodes. 半导体器件电学仿真 DESSIS Therefore, a virtual device is an approximation of a real device. Continuous properties such as doping profiles are represented on a sparse mesh and, therefore, are only defined at a finite number of discrete points in space. The doping at any point between nodes (or any physical quantity) can be obtained by interpolation. Each virtual device structure is described in the ISE TCAD tool suite by two files: The grid (or geometry) file The data (or doping) file 半导体器件电学仿真 DESSIS The grid (or geometry) file contains a description of the various regions of the device, that is, boundaries, material types, and the locations of any electrical contacts. This file also contains the grid. 半导体器件电学仿真 DESSIS The data (or doping) file contains the properties of the device, such as the doping profiles, in the form of data associated with the discrete nodes. 半导体器件电学仿真 DESSIS 1. Creating and meshing device structures Device structures can be created in various ways, including 1D, 2D, or 3D process simulation (DIOS?), 3Dprocess emulation (DEVISE?), and 2D (MDRAW? and DEVISE) or 3D (DIP? and DEVISE) structure editors. Regardless of the means used to generate a virtual device structure, it is recommended that the structure be remeshed using MDRAW (2D meshing with an interactive graphical user interface or MESH? (1D, 2D, and 3D meshing without a GUI) to optimize the grid for efficiency. All device structur