15-4-3-Optoelectronics资料.pptVIP

Advanced structures: Tailoring electronic structure 5. Advanced structures:  tailtoring electronic structure quantum well quantum wire quantum dot Quantum Wire Quantum Well Quantum Dot 6. Advanced structures: Tailoring the cavity Ⅰ. Fabry—Perot Cavity i) Issues in F—P Cavity Fabrication: cleaving a semiconductor wafer along the cleavage planes (解理面) Typical data: reflective coefficience R~0.3—0.4 length of cavity L~150 μm—1mm frequency separation Optically flat and polished parallel faces Height and cavity structure: . Determine optical confinement factor . Usually only the ground state mode is excited Cavity length: Determines modes spacing Transverse confinement: determines the transverse modes that are produces in the output Optically flat and polished parallel faces Light output Injection current kinks Wide stripe Narrow stripe Narrow stripe . single transverse mode Wide stripe . multiple transverse modes Strong transverse confinement can be achieved by two approaches : (1) Gain guide cavities (增益导引型光腔) (2) Index guide cavities (折射率导引型光腔) ii) Gain Guide Cavities (GGC) Stripe Geometry Laser Metal Metal Active layer Carrier concentration profile z x y Metal Oxide -y y Current density profile Index profile 0 0 0 Gain/loss profile (1) Effects to be considered : Gain guided confinement : gain within stripe width is higher Anti-guided effect : carrier concentration within stripe width is high Leakage loss : confinement effect is weak (2) The disadvantages for GGC higher multi-modes output linewidth larger kink occurred in P-J curve iii) Index Guided Cavities (IGC) Epitaxy longitudinal heterostructure Etching and regrowth lateral heterostructure Two direction confinement by lateral and longitudinal confinement index step Buried heterostructure laser (掩埋异质结激光器) Advantages : Disadvant