1.06μm注入锁定增益开关半导体激光器特性分析和功率放大的研究.pdfVIP

第44卷第10期 红外与激光工程 2015年10月 Vol.44No.10 InfraredandLaserEngineering Oct.2015 Characteristics analysis and power amplification of 1.06滋m injection鄄locked gain鄄switching semiconductor laser Chen He, Chen Shengping, Hou Jing, Jiang Zongfu (College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, China) Abstract: Detailed characteristics analysis and power amplification of gain switched Febry鄄P佴rot cavity semiconductor laser at 1.06滋m were reported. The gain switched laser diode, which is modulated by high frequency sinusoid electrical signal, can generate stable pulse laser trains with pulse width around 100ps, average power around 20 mW and repetition rate adjustable from 500MHz to 2 GHz, while injection locking is employed effectively in improving the spectral performance of output pulse by suppressing the extra longitude modes. Besides, the effects of the variations of modulation frequency, modulation power, bias current magnitude, injection power and working temperature on the output performance of the laser diode were experimentally demonstrated in detail. Furthermore, the injection locked gain switching laser diode was amplified in power with a two鄄stage all fiber amplifier chain as a seed source, obtaining an output power of 82 W with a pump light of 108W and light鄄to鄄light conversion rate of 76% while retaining good power to power linearity. Key words: gain鄄switching; semiconductor laser; injection locking; fiber amplifier CLC number: O799 Document code: A Article ID: 1007-2276(2015)10-2900-06 1.06滋m注入锁定增益开关半导体激光器特性分析与功率放大研究 陈 河，陈胜平，侯 静，姜宗福 (国防科学技术大学光电科学与工程学院，湖南 长沙410073) 摘 要院报道了 1.06滋m增益开关半导体激光器的详细特性