Effects of Annealing Time on the Performance of OTFT on Glass with ZrO2 as Gate Dielectric.pdfVIP

Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2012, Article ID 901076, 5 pages doi:10.1155/2012/901076 Research Article Effects of Annealing Time on the Performance of OTFT on Glass with ZrO2 as Gate Dielectric W. M. Tang,1, 2 M. G. Helander,1 M. T. Greiner,1 Z. H. Lu,1, 3 and W. T. Ng2 1 Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, ON, Canada M5S 3E4 2 Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, ON, Canada M5S 3G4 3 Department of Physics, Yunnan University, 2 Cuihu Beilu, Yunnan, Kumming 650091, China Correspondence should be addressed to W. M. Tang, wmtang@vrg.utoronto.ca Received 15 July 2011; Accepted 6 October 2011 Academic Editor: Hsiao W. Zan Copyright © 2012 W. M. Tang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copper phthalocyanine-based organic thin-film transistors (OTFTs) with zirconium oxide (ZrO2 ) as gate dielectric have been fabricated on glass substrates. The gate dielectric is annealed in N2 at different durations (5, 15, 40, and 60 min) to investigate the effects of annealing time on the electrical properties of the OTFTs. Experimental results show that the longer the annealing time for the OTFT, the better the performance. Among the devices studied, OTFTs with gate dielectric annealed at 350◦C in N2 for 60 min exhibit the best device performance. They have a small threshold voltage of −0.58 V, a low subthreshold slope of 0.8 V/decade, and a low off-state current of 0.73 nA. These characteristics demonstrate that the fabricated device is sui