毕业论文（设计）温度对hemt器件的影响研究.docxVIP

温度对HEMT器件栅泄漏电流的影响  STYLEREF 标题 1 \* MERGEFORMAT Error! No text of specified style in document. 摘 要 GaN半导体材料具有禁带宽度大、电子饱和速度高、导热性能好等优点，在高温、大功率、微波器件领域拥有很大的发展潜力。其中，AlGaN/GaN HEMT作为GaN基微电子器件代表，可广泛利用与航天等领域。由于器件长时间工作在高偏压和高空间辐射的环境下，器件的可靠性是一件值得科学家们关注的问题，本论文主要是探讨新型的AlGaN/GaN HEMT器件。 首先，介绍AlGaN/GaN HEMT器件的研究现状以及发展潜力。 其次，介绍了AlGaN/GaN HEMT器件的性能参数、工作原理，介绍了仿真软件TCAD silvaco的物理模型。 最后，使用silvaco仿真软件自定义一个AlGaN/GaN HEMT器件，再对其进行栅电流与温度特性的仿真、势垒层厚度与栅电流特性的仿真、漏电流与温度的特性仿真、漏电流与势垒层厚度的特性仿真，仿真结束之后，又通过Origin数据处理软件进行数据处理，得出特性曲线，并通过分析特性曲线得出器件的特性，最后我们展望如何得性能更好的AlGaN/GaN器件结构。 关键字：AlGaN/GaN HEMT silvaco 温度 栅泄漏电流  Abstract GaN semiconductor material having a large band gap, high electron saturation velocity, good thermal conductivity, etc., have great potential in high-temperature, high-power microwave devices in the field. And, AlGaN / GaN HEMT GaN-based microelectronic devices as representatives of other widely available and aerospace use. Because the device to work long hours under high bias and high space radiation environment, then the device reliability is a problem worthy of concern to scientists, the main thesis is to explore the new AlGaN / GaN HEMT . Firstly, research status AlGaN / GaN HEMT devices and development potential. Secondly, the introduction of the AlGaN / GaN HEMT device performance parameters, working principle, introduced simulation software TCAD silvaco physical model. Finally, the use of a custom simulation software silvaco AlGaN / GaN HEMT devices, then its gate current and temperature characteristics of the simulation, the simulation of the barrier layer thickness and gate current characteristics of the leakage current versus temperature characteristic simulation, leakage current and potential characteristics of the barrier layer thickness simulation, after the end of the simulation, data processing and data processing software by Origin, derived characteristic curves characteristic curves derived by analyzing the characteristics of the device, and finally w