中科院_专用集成电路设计_作业实用技术.docxVIP

PAGE \* MERGEFORMAT4 Assignment 2 1. Give a descriptive definition for each of the following terms. Starting substrate Crystalline silicon wafers Active region The region between saturation and cutoff used for linear amplification LOCOS process Short for LOCal Oxidation of Silicon process, a? HYPERLINK /wiki/Microfabrication \o Microfabrication microfabrication?process where? HYPERLINK /wiki/Silicon_dioxide \o Silicon dioxide silicon dioxide?is formed in selected areas on a silicon wafer having the Si-SiO2?interface at a lower point than the rest of the silicon surface Field oxide layer It is a thin layer of Silicon dioxide present beneath the polysilicon gate that serves as dielectric for gate oxide capacitance Shallow Trench Isolation (STI) An integrated circuit feature which prevents electrical current leakage between adjacent semiconductor device components Positive resist and negative resist Positive resist: a type of photoresist in which the portion of the photoresist that is exposed to light becomes soluble to the photoresist developer Negative resist: a type of photoresist in which the portion of the photoresist that is exposed to light becomes insoluble to the photoresist developer Sputtering A process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles Reactive ion etching An etching technology that High-energy ions from the plasma, generated under low pressure (vacuum) by an electromagnetic field, attack the wafer surface and react with it Strong inversion layer Semiconductor surface minority carrier concentration is equal to the majority of the body of the carrier concentration, the potential of the formation of a surface of the semiconductor surface is approximately a constant value, the depletion layer charge and depletion layer thickness maxima state called strong inversion layer Threshold voltage of MOS transistor The voltage at which there are sufficient electrons in the inversion