含有金属盐的溶胶凝胶制备过程呢详细分解.doc

含有金属盐的溶胶凝胶制备过程呢详细分解.doc

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Sol–Gel Processing of Thin Films with Metal Salts INTRODUCTION Sol–gel process is an attractive alternative to other methods for synthesis of ceramics and glasses for many reasons: for example, low temperature synthesis, simple equipments to be used, thin film formability and so on. Particularly, sol–gel process is very useful for thin film deposition because of the capability to coat materials of various shapes and/or large area, to control the composition easily for obtaining solutions of homogeneity and controlled concentration without using expensive equipment. Historically, metal alkoxides have been employed in sol–gel process, which readily undergo catalyzed hydrolysis and condensation to form nanoscale oxide or hydroxide particles. Still in general, metal alkoxides are often used as raw materials in sol–gel process, but many of the alkoxides are very difficult to be obtained and dealt with because of the high sensitivity to the atmospheric moisture. In addition, when multi-component ceramics are to be prepared, the rate of alkoxide hydrolysis should be controlled, which is not very easy (Nishio, 1999a, 2000a, 2000b, 2003; Kodaira, 2003). Metal salts are very useful, cheaper, very easy to handle than metal alkoxides, and hence are good alternatives if they are readily converted to oxides by thermal decomposition and can be solved in many kinds of organic solvents in which metal complexes are formed. In other words, the sol–gel process with metal salts can be realized by chelating the metal ions by organic ligands. The metal salts include chlorides, acetates, nitrates, sulfides and so on. Chlorides, nitrates and sulfides have high solubility in water or organic solvents. In some cases acetates have lower solubility in water or organic solvents than other metal salts. However, acetate ions can stabilize the metal ions in solutions through coordination by C=O groups. If metal salts are just dissolved in water or organic solvents without chemical reaction like a c

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