TFT制程简介报告.pptVIP

5250 ITO：500A ITO沉积 ITO A B A B 5375 ITO：500A 上光阻 光阻 光阻厚度：15800A ITO A B A B 5850 ITO：500A 湿蚀刻 光阻 ITO A B A B 5875 5852 ITO：500A 去光阻 ITO A B A B Glass Substrate Contact Hole Transparent electrode Gate metal (ITO) S/D metal a-Si n+ a-Si Passivation (P-SiNx) Insulator (G-SiNx) TFT Layers Gate Metal : AlNd/Mo(N)=1600/1100 A 1800/900 2) G I N : G-SiNx=3500 I/N=1350 3) S/ D Metal : MoN/Al/MoN=300/1800/400 250/2000/350 4) Passivation : P-SiNx=3200 5) ITO : 670 * * TFT pr