硅超大规模集成电路工艺技术—理论实践与模型_课后习题答案.doc

1.2. Assuming dopant atoms are uniformly distributed in a silicon crystal, how far apart are these atoms when the doping concentration is a). 1015 cm-3, b). 1018 cm-3, c). 5x1020 cm-3. ? Answer: ? The average distance between the dopant atoms would just be one over the cube root of the dopant concentration: ? a) b) c) ? 1.3. Consider a piece of pure silicon 100 μm long with a cross-sectional area of 1 μm2. How much current would flow through this “resistor” at room temperature in response to an applied voltage of 1 volt? ? Answer: ? If the silicon is pure, then the carrier concentration will be simply ni. At room temperature, ni ≈ 1.45 x 1010 cm-3. Under an applied field, the current will be due to drift and hence, ? 1.10. A state-of-the-art NMOS transistor might have a drain junction area of 0.5 x 0.5 μm. Calculate the junction capacitance associated with this junction at an applied reverse bias of 2 volts. Assume the drain region is very heavily doped and the substrate doping is 1 x 1016 cm-3. ? Answer: ? The capacitance of the junction is given by Eqn. 1.25. ? ? The junction built-in voltage is given by Eqn. 1.24. ND is not specified except that it is very large, so we take it to be 1020 cm-3 (roughly solid solubility). The exact choice for ND doesnt make much difference in the answer. ? ? Since ND NA in this structure, the capacitance expression simplifies to ? ? Given the area of the junction (0.25 x 10-8 cm2, the junction capacitance is thus 4.2 x 10-17 Farads. ? ? 3.2. A boron-doped crystal pulled by the Czochralski technique is required to have a resistivity of 10 ? cm when half the crystal is grown. Assuming that a 100 gm pure silicon charge is used, how much 0.01 ? cm boron doped silicon must be added to the melt? For this crystal, plot resistivity as a function of the fraction of the melt solidified. Assume k0 = 0.8 and the hole mobility μp = 550 cm2 volt-1 sec-1. ? Answer: Using the mobility value given, and we have: ? 10 ? cm ? NA = 1.14