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硅超大规模集成电路工艺技术—理论实践与模型_课后习题答案
1.2. Assuming dopant atoms are uniformly distributed in a silicon crystal, how far apart are these atoms when the doping concentration is a). 1015 cm-3, b). 1018 cm-3, c). 5x1020 cm-3.
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Answer:
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The average distance between the dopant atoms would just be one over the cube root of the dopant concentration:
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a)
b)
c)
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1.3. Consider a piece of pure silicon 100 μm long with a cross-sectional area of 1 μm2. How much current would flow through this “resistor” at room temperature in response to an applied voltage of 1 volt?
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Answer:
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If the silicon is pure, then the carrier concentrat
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