锗浓缩法制备较高张应变锗的发光性质解析.pptVIP

Room temperature photoluminescence from tensile-strained GOI fabricated by a Ge condensation technique Shihao Huang, Weifang Lu, Cheng Li, Wei Huang, Hongkai Lai, and Songyan Chen Department of Physics, Semiconductor Photonics Research Center, Xiamen University * * Outline 2、Tensile-strained GOI fabrication 3、Properties of GOI 4、Conclusion 1、Introduction 1、Introduction J.Liu, et al, MIT, Optics Letters, 35(5):679-681, 2010 Direct Gap Optical Gain from Ge-on-Si Tensile strain transform Ge into direct band gap meterial X. Sun, Ge-on-Si Light-Emitting Materials and Devices for Silicon Photoni