晶体硅太阳能电表面PECVD淀积SiN减反射膜工艺研究.docVIP

毕 业 论 文 题 目 晶体硅太阳能电池表面PECVD淀积SiN 减反射膜工艺研究 目 录 摘要 ……………………………………………………………………………………………1 绪论 ……………………………………………………………………………………………3 第一章 PECVD淀积氮化硅薄膜的基本原理……………………………………………………6 1.1化学气相淀积技术 ………………………………………………………………………6 1.2 PECVD原理和结构 ………………………………………………………………………6 1.3 PECVD薄膜淀积的微观过程 ……………………………………………………………8 1.4 PECVD淀积氮化硅的性质 ………………………………………………………………9 1.5表面钝化与体钝化 ………………………………………………………………………9 第二章 实验 ……………………………………………………………………………………11 2.1 PECVD设备简介 …………………………………………………………………………11 2.2 PECVD设备操作流程 …………………………………………………………………13 2.3 SiN 减反射膜PECVD淀积工艺流程……………………………………………………13 2.4最佳薄膜厚度和折射率的理论计算 ………………………………………………13 2.5 理论实验总结 ……………………………………………………………………………15 结束语 ……………………………………………………………………………………………16 参考文献 …………………………………………………………………………………………17 晶体硅太阳能电池表面PECVD淀积SiN减反射膜工艺研究 摘 要 等离子增强化学气相淀积氮化硅减反射薄膜已经普遍应用于光伏工业中，其目的是在晶体硅太阳能电池表面形成减反射薄膜，同时达到了良好的钝化作用。氮化硅膜的厚度和折射率对电池性能都有重要的影响。探索最佳的工艺条件来制备最佳的薄膜具有重要意义。本课题是利用RothRau的SiNA设备进行淀积氮化硅薄膜的实验，介绍了几种工艺参数对薄膜生长的影响，获得了生长氮化硅薄膜的最佳工艺条件，制作出了高质量的氮化硅薄膜。实验中使用了椭偏仪对样品进行膜厚以及折射率的测量。 关键词：等离子增强化学气相淀积，氮化硅薄膜，太阳能电池，光伏效应，钝化 ABSTRACT SiN Film plasma-enhanced chemical vapor deposition (PECVD) is widely used in P-V industry as an antireflection thinfilm on the surface of crystal silicon solar cell. In addition this process takes advantage of an exellent passivation effect. Both the thickness and refractive index of the SiN film make important influences to the performance of solar cells. So it is very important to find the best process parameters to deposit the best film. In this paper, the experiment of SiN film deposition was completed with the equipment named SiNA produced by RothRau. The influence of the parameters to the gowth of the film was introduced based on the experiment, and the best parameters to produce the top-quality SiN film were obtainted. The Spectroscopic ellipsometry was used to test the thickness and refractive index of the samples during the experiment. Key words: PECVD, SiN film, solar cell, photo