15-2-4-Optoelectronics技术总结.pptVIP

7. The avalanche photodetector (APD 雪崩光电极管) Typical APD Typical structure MAPD (台面型APD) GAPD (平面保护环型) RAPD (拉通型 ) MAPD and GAPD, response speed is slow because the carriers’ diffusion can’t be neglected. p p For direct gap materials, one can have the same region for absorption and avalanche processes. substrate Top contact Back contact Typical APD Si-APD only electron injected, low noise, high Ge-APD high noise, InGaAs/InP-APD (surface loss is low ) * * The sensitivity (灵敏度)is determined by the ratio of signal to noise (RSN,信噪比) Signal or Noise RSN Sensitivity PIN: no gain, noise RSN APD: high gain, signal RSN Avalanche photodiodes (APDs), are widely used in optical communications due to their high speed and internal gain. APD structures Guard rings: to avoid breakdown at the edges Heat sinking: to avoid thermal fluctuations Heat sinking There are three p-type layers of different doping levels next to the n+ layer to suitably modify the field distribution across the diode. The first is a thin p-layer and the second is a thick lightly p-type doped (almost intrinsic) π-layer and the third is a heavily doped p+ layer Reach through APD (RAPD, 拉通型APD): ? The diode is reverse biased to increase the fields in the depletion regions. Under zero bias the depletion layer in the p-region does not normally extend across this layer to the π-layer. But when a sufficient reverse bias is applied, the depletion region in the p-layer widens to reach-through to the π-layer (and hence the name reach-through). Be similar to PIN: Be different from PIN: and layers are thin P layer is added to keep uniform high electric fields ( ), is avalanche region; ? layer is undoped or lightly P-doped, ? layer is absorption region. about for direct gap materials about for indirect gap materials : critical electric field intensity E Ec Ec