Grebennikov-High-Efficiency-PA-Design-Lecture-4.ppt

  1. 1、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。。
  2. 2、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载
  3. 3、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
查看更多
Grebennikov-High-Efficiency-PA-Design-Lecture-4

1 Optimum voltage conditions across switch: - second-order differential equation boundary conditions: sinusoidal load current 50% duty cycle 4.6. Class E with quarterwave transmission line 4.6. Class E with quarterwave transmission line Optimum circuit parameters : - series inductance - shunt capacitance - load resistance Load current Collector voltage Collector current Current through capacitance Current through transmission line Optimum impedances at fundamental and harmonics for different Class E load networks 4.6. Class E with quarterwave transmission line Input load network admittance 4.7. Broadband Class E circuit design Reactance compensation load network Reactance compensation principle 1 - impedance provided by series L0C0 resonant circuit 2 - impedance provided by parallel LC resonant circuit summation of reactances with opposite slopes results in constant load phase over broad frequency range To maximize bandwidth: Optimum circuit parameters using equations for inductance L and capacitance C in Class E mode 4.7. Broadband Class E circuit design Double reactance compensation load network To maximize bandwidth: Optimum circuit parameters using equations for inductance L and capacitance C in Class E mode Load network phase angle 1 - single reactance compensation load network 2 - double reactance compensation load network 4.7. Broadband Class E circuit design Broadband Class E power amplifier with double reactance compensation f0 = 120…180 MHz Drain voltage and current waveforms LDMOSFET: gate length 1.25 um gate width 7x1.44 mm 1 - drain efficiency 71% 2 - power gain 9.5 dB Input power - 1 W Input VSWR 1.4 Gain flatness ? ? 0.3 Pin = 1 W Typical bipolar RF Class F power amplifier zero-volt Class C biasing using RF choke 4.8. Practical high efficiency RF and microwave power amplifiers T-type input and output matching circuits with parallel capacitance quarterwave transmission line in collector to suppress even harmonics high

文档评论(0)

cbf96793 + 关注
实名认证
内容提供者

该用户很懒,什么也没介绍

1亿VIP精品文档

相关文档