微纳米材料作业.pptVIP

Preparation of ITO thin films Magnetron sputtering Magnetron sputtering Magnetron sputtering Thermal Evaporation in Vacuum Thermal Evaporation in Vacuum Electron beam evaporation Electron beam evaporation ITO thin films prepared by a microwave heat ITO thin films prepared by a microwave heat Sol-gel method Sol-gel method Coating solutions containing solvothermally synthesized ITO nanoparticles to get ITO thin films(溶剂热法) Thin films were fabricated by spin-coating the coating solutions on glass substrates with subsequent low temperature curing. Advantage: Solvothermal method is simple and the ITO nanoparticles synthesized can be homogeneous, nano-sized, less aggregated, crystalline, and easy to dispersed. Chemical Vapor Deposition (CVD) Types of CVD Systems APCVD (Atmospheric) LPCVD (Low Pressure 0.1 –5 torr) PECVD (Plasma enhanced) MOCVD (Metal-organic CVD), PHCVD (Post-hydrogenated CVD ) Reaction Steps Gas Transport chamber Reaction of gas to form film precursors Diffusion of precursors to substrate Adsorption of prec Surface Reactions Film Growth due to reactions By product removal from substrate Exhaust of by products MOCVD in ITO thin film preparation MOCVD is the common system in ITO thin film preparation ，Indium and Tin metal organic compounds are raw materials MOCVD in ITO thin film preparation Raw materials:In(C5H7O2)3（乙酰丙酮铟) (CH3)4Sn（ 四甲基锡） Substrate：Borosilicate glass plate（硼硅玻璃板） Reaction conditions In(C5H7O2)3 placed in a container with 280℃. (CH3)4Sn placed in a container with 320℃. Reaction temperature：300 ℃ The transmission and reaction steps of MOCVD Reactions 2In(C5H7O2)3(气态)+36O2（气态）→In2O3（固态）+30O2 (气态)+21H2O (气态) (CH3)4Sn（气态）+8O2(气态)→SnO2（固态）+4CO2 (气态)+6H2O(固态) Advantages Film prepared can be low resistivity，high transmittance for visible light and uniform * substrate V (0) E + Ar Ar+ - e - e - e + Ar+ Target material (IT/ITO) Fig.1 The principle of DC Magnetron sputtering Fig.2 The schematic structure of magnetron sputtering A