MOS电容器.ppt

* * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * Slide 5-* Quasi-Static CV of MOS Capacitor The quasi-static CV is obtained by the application of a slow linear-ramp voltage ( 0.1V/s) to the gate, while measuring Ig with a very sensitive DC ammeter. C is calculated from Ig = C·dVg/dt. This allows sufficient time for Qinv to respond to the slow-changing Vg . C Cox accumulation depletion inversion Vg Vfb Vt Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 5-* (1) MOS transistor, 10kHz. ?????????? (Answer: QS CV). (2)?MOS transistor, 100MHz. ??????? (Answer: QS CV). (3) MOS capacitor, 100MHz. ? ????? (Answer: HF capacitor CV). (4) MOS capacitor, 10kHz. ?????????? (Answer: HF capacitor CV). (5) MOS capacitor, slow Vg ramp.???(Answer: QS CV). (6) MOS transistor, slow Vg ramp.???(Answer: QS CV). EXAMPLE : CV of MOS Capacitor and Transistor Does the QS CV or the HF capacitor CV apply? C Vg QS CV HF capacitor CV MOS transistor CV, Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 5-* 5.7 Oxide Charge–A Modification to Vfb and Vt Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 5-* Types of oxide charge: Fixed oxide charge, Si+ Mobile oxide charge, due to Na+contamination Interface traps, neutral or charged depending on Vg. Voltage/temperature stress induced charge and traps--a reliability issue 5.7 Oxide Charge–A Modification to Vfb and Vt Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 5-* EXAMPLE: Interpret this measured Vfb dependence on oxide thickness. The gate electrode is N+ poly-silicon. Solution: What does it tell us? Body work function? Doping type? Other? 0 –0.15V –0.3V Tox Vfb 10 nm 20 nm 30 nm Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 5-* from intercept from slope N-type substrate, E 0 , vacuum level E f , E c E v E c E f E v y g y s = y g + 0.15V N + -Si gate Si body Modern Semiconductor Devices for Integrated C