- 4
- 0
- 约 6页
- 2016-08-22 发布于河南
- 举报
余应涛200-201-B48
CHAPRER 5 The pn Junction and Metal-Semiconductor Contact
Figure 5.19| Energy-band diagram of a forward-biased metal-semiconductor rectifying contact showing current directions. Also shown is the circuit symbol of a Schottky barrier diode.
Approximation applies and that thermal equilibrium is not affected by this process. Figure 5.19 shows the one-dimensional barrier with an applied forward-bias voltage VD and shows two electron current density components. The current is the electron current density due to the flow of electrons from the semiconductor into the metal, and the current i
您可能关注的文档
最近下载
- 标准图集-06SG501(民用建筑钢结构防火构造).pdf VIP
- 2024年可行性研究报告投资估算及财务分析全套计算表格(含附表--带只更改标红部分-作简单).xls
- 天津大学《精细合成化学》课件Chap. 5 官能团的保护-张发光.pdf VIP
- GB50278—2023起重设备安装工程施工及验收规范全面解读.pdf VIP
- 天津大学《精细合成化学》课件Chap. 4 导向基与合成导向-张发光.pdf VIP
- Reading explorer5级精品教学课件Book 5_Unit 4.pptx VIP
- 发热待查诊治专家共识(2026版)解读.pptx VIP
- VTE个案PPT汇报精美模板.pptx VIP
- 碳纤维加固工程质量验收记录.docx VIP
- Reading explorer5级精品教学课件Book 5_Unit 5.pptx VIP
原创力文档

文档评论(0)