自我对准钛金属矽化物.doc

Research on Salicide (Titanium Silicide) by Chih-Hsun Chu (朱志勳) I. Challenges of Salcide in ULSI: 1. Formation of ultra-thin film 2. Silicidation of laterally confined areas 3. Thermal stability of the silicide/Si structure, especially in narrow line width II. Contact or Spacer etching and cleaning 1. CHF3:CF4:Ar=20:20:400 @ 200 mTorr, 200 W, etch rate ~80 nm / 30 s 2. O2 plasma treatment @ 1500 mTorr, 150 W , 10 s (remove polymer) 3. H2SO4:H2O2=5:1 @ 125 oC 4. CF4:O2=50:200 @ 1500 mTorr, 150 W, 10s (remove structural damage) 5. NH4OH:H2O2:H2O=1:4:20 @ 65 oC 6. HCl:H2O2:H2O=1:1:6 @ 65 oC 7. 0.25% HF dip [Wet oxide: 0.51 nm/min, TEOS(densified): 3.2 nm /min, TEOS: 6.7 nm /min] 8. Ti deposition [N. Aoto, M. Nakamori, H. Hada, T. Kunio, Y. Teraoka, I. Nishiyama and E. Ikawa, Extended abastract of ECS 1993, 511 (1993)] III. Silicon consumption: Ti + 2Si TiSi2 = 1.0 : 2.24 : 2.5 Ti + N TiN = 1.0 : - : 2 The maximum thickness of the TiN to be limitted to 40 nm could be due to the diffusion barrier of the already formed TiN impeding further nitrogen atoms from reaching Ti/TiN interface. IV. Selective etching solution: 1. H2SO4:H2O2 = 1:3 @ 120 oC 2. H2SO4:H2O2 = 4:1 @ 120 oC (CAROS etch ) 3. H2SO4:H2O2 = 1:10 @ 65 oC, 3 min for 30 nm Ti [E. Ganin, S. Wind, P. Ronsheim, A. Yapsir, K. Barmak, J. Bucchignano, R. Assenza, MRS, 303, 109 (1993)] 4. NH4OH:H2O2:H2O = 1:1:5 @ 40 oC 24 [S.L. Zhang, W. Kaplan, M. Ostling, H. Norstrom, A. Lindberg, MRS, 260, 233 (1992)] 5. NH4OH:H2O2:H2O=1:4:20 @ 65 oC (temperature age) H2SO4 base is superio to NH4OH base with no overetch problem and high selectivity [D. Moy, S. Basavaiah, H. Protschka, L.K. Wang, ECS Proc. 1st Int. Symp. on ULSI Science and Technology (1987)] 6. H3PO4:H2O2:H2O=2:3:4 @ 80 oC [SEMATECH 0.25 ?m CMOS High Performance Logic Flow] V. Silicidation: 1. 600 - 700 oC, 20 s, N2 (650 oC): should performed below 650 oC to prevent lateral overgrowth