邹国辉 2008304104 228-229 C12.docVIP

228页-229页 Oxide;however,the term metal is still used. The parameter tox in the figure is the thick-ness of the oxide and Eox is the permittivity of the oxide. ……氧化物。但是长期金属仍然在被使用，参数图表中，参数“tox”代表氧化物的厚度，参数EOX 代表氧化物的电容率。 A review of voltage and potential notation used im this and the following chap-ter is in order.In general,the term 电压的复习和可能使用的符号会按序在这章和下章用到。通常来说，这个学期 Potential notation 可能使用的符号有： 1.V,with an appropriate subscript,is used for a terminal voltage or device or device voltage parameter,such as threshold voltage or flat-band voltage defined later ;and V，一个合适的下标，用于终端设备或设备的电压或电压参数如阈值电压或平带电压（后面会定义） 2.φ,with an appropriate subscript,is used for a potential or potential difference with in the device structure. φ一个合适的下标，用于设备结构的中的电位或位差 As with mosr engineering notation,there may be a few exceptions noted within the chapter. 至于科学工程符号，可能有少数例外的章节内指出 6.2.1.Energy-Band Diagrams and Charge Distributions 6.2.1能带图示和电荷分布图 The physics of the MOS structure can be more easily explained with the aid of the simple parallel-plate capacitor.Figure 6.6a shows a parallel-plate capacitor with the top plate at a negative voltage with respect to the bottom plate.An insulator material separates the two plates.With this bias,a negative charge exists on the top plate,a positive charge exists on the bottom plate,and an electric field is induced between the two plates as shown.The capacitance per unit area for this geometry is 金属氧化物半导体电容器的物理结构借助一个简单平行板电容器可以更容易解释。图6.6a显示了一个平行板电容器在负电压金属顶部相当于在金属片底部。在两块金属片中，一块绝缘材料分开了。随着这种偏差，负电荷就在金属顶部出现，正电荷就在金属底部出现。两块金属片间的电场就会如图所示的减少。每单位的电容就是： C’ E/d 6.3 Where E is the permittivty of the insulator and d is the distance between the two plates.The magnitude of the charge per unit area on either plate is E代表绝缘介质的电容率，d 是两极板间距。每块极板上单位面积的电量为 Q’ C’V 6.4 where the prime indicates charge or capacitance per unit area.The magnitude of the electric field is 撇号表示单位面积上的电量或电容。电场强度为： E V/d Figure 6.6b shows an MOS capacitor with a p-type semiconductor substrate.The top met