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Czochralski growth method CHAPTER 1 The Crystal Structure Solids materials. Silicon, for example, has concentrations of most impurities of less than 1 part in 10 billion. The high-purity requirement means that extreme care is necessary in the growth and the treatment of the material at each step of the fabrication process. The mechanics and kinetics of crystal growth are extremely complex and will be described in only very general terms in this text. However, a general knowledge of the growth techniques and terminology is valuable. 1.6.1 Growth from a Melt A common technique for growing single-crystal materials is called the Czochralski method. In this technique, a small piece of single-crystal material, known as a seed, is brought into contact with the surface of the same material in liquid phase, and then slowly pulled form the melt. As the seed is slowly pulled, solidification occurs along the plane between the solid-liquid interface. Usually the crystal is also rotated slowly as it is being pulled, to provide a slight stirring action to the melt, resulting in a more uniform temperature. Controlled amounts of specific impurity atoms, such as boron or phosphorus, may be added to the melt so that the grown semiconductor crystal is intentionally doped with the impurity atom. Figure 1.24a shows a schematic of the Czochralski growth process and a silicon ingot or boule grown by this process. Some impurities may be present in the ingot that are undesirable. Zone refining is a common technique for purifying material. A high-temperature coil, or r-f induction coil, is slowly passed along the length of the boule. The temperature induced by the coil is high enough so that a thin layer of liquid is formed. At the solid-liquid interface is a distribution of impurities between the two phases. The parameter that describes this distribution is called the segregation coefficient: the ratio of the concentration of impurities in the solid to the concentration in the liquid. If